ds30422 rev. 1 - 2 1 of 6 dcx (xxxx) h www.diodes.com diodes incorporated epitaxial planar die construction built-in biasing resistors lead-free device characteristic symbol value unit supply voltage v cc 50 v input voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh dcx143th dcx114th v in -10 to +40 -10 to +40 -10 to +30 -6 to +40 -5 to +12 -10 to +40 -5 vmax -5 vmax v output current dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh dcx143th dcx114th i o 30 30 100 70 100 50 100 100 ma output current all i c (max) 100 ma power dissipation (total) p d 150 mw thermal resistance, junction to ambient air (note 2) r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings npn section @ t a = 25 c unless otherwise specified a m l b c h k g d cxxym mechanical data case: sot-563, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin solderable per mil-std-202, method 208 (note 1) terminal connections: see diagram weight: 0.005 grams (approx.) t c u d o r p w e n p/n r1 r2 marking dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh dcx143th dcx114th 22k 47k 4.7k 10k 2.2k 10k 4.7k 10k 22k 47k 4.7k 47k 47k 10k - - c17 c20 c08 c14 c06 c13 c07 c12 r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only dcx (xxxx) h complementary npn/pnp pre-biased small signal sot-563 dual surface mount transistor sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.15 0.25 0.20 m 0.10 0.18 0.11 all dimensions in mm note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availability and minimum order details. 2. mounted on fr4 board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. schematic diagram, top view
ds30422 rev. 1 - 2 2 of 6 dcx (xxxx) h www.diodes.com characteristic symbol min typ max unit test condition input voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v l(off) 0.5 0.5 0.5 0.3 0.5 0.5 1.1 1.1 1.1 1.1 v v cc = 5v, i o = 100 a dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v l(on) 1.9 1.9 1.9 1.9 3.0 3.0 3.0 1.4 1.1 3.0 v o = 0.3v, i o = 5ma v o = 0.3v, i o = 2ma v o = 0.3v, i o = 20ma v o = 0.3v, i o = 1ma v o = 0.3v, i o = 5ma v o = 0.3v, i o = 10ma output voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v o(on) 0.1 0.3 v i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 5ma / 0.25ma i o /i l = 5ma / 0.25ma i o /i l = 10ma / 0.5ma input current dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh i l 0.36 0.18 1.8 0.88 3.6 0.88 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh g l 56 68 20 68 80 30 v o = 5v, i o = 5ma v o = 5v, i o = 5ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 5ma electrical characteristics npn section @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only characteristic (ddc143th & ddc114th only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 50 v i c = 1ma emitter-base breakdown voltage bv ebo 5 v i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current i ebo 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c /i b = 2.5ma / 0.25ma dcx143th i c /i b = 1ma / 0.1ma dcx114th dc current transfer ratio h fe 100 250 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 250 mhz v ce = 10v, i e = -5ma, f = 100mhz characteristic symbol value unit supply voltage v cc 50 v input voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh dcx143th dcx114th v in +10 to -40 +10 to -40 +10 to -30 +6 to -40 +5 to -12 +10 to -40 +5 vmax +5 vmax v output current dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh dcx143th dcx114th i o -30 -30 -100 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) p d 150 mw operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings pnp section @ t a = 25 c unless otherwise specified
ds30422 rev. 1 - 2 3 of 6 dcx (xxxx) h www.diodes.com characteristic symbol min typ max unit test condition input voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v l(off) -0.5 -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 -1.1 1.1 v v cc = -5v, i o = -100 a dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v l(on) -1.9 -1.9 -1.9 -1.9 -3.0 -3.0 -3.0 -1.4 -1.1 -3.0 v o = -0.3v, i o = -5ma v o = -0.3v, i o =- 2ma v o = -0.3v, i o =- -20ma v o = -0.3v, i o = -1ma v o = -0.3v, i o = -5ma v o = -0.3v, i o = -10ma output voltage dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh v o(on) -0.1 -0.3 v i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma /- 0.5ma input current dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh i l -0.36 -0.18 -1.8 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off) -0.5 a v cc = 50v, v i = 0v dc current gain dcx124eh dcx144eh DCX143EH dcx114yh dcx123jh dcx114eh g l 56 68 20 68 80 30 v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma gain-bandwidth product* f t 250 mhz v ce = -10v, i e = -5ma, f = 100mhz * transistor - for reference only characteristic (dcx143th & dcx114th only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -50 v i c = -1ma emitter-base breakdown voltage bv ebo -5 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current i ebo -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c /i b = 2.5ma / 0.25ma dcx143th i c /i b = 1ma / 0.1ma dcx114th dc current transfer ratio h fe 100 250 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 250 mhz v ce = -10v, i e = 5ma, f = 100mhz @ t a = 25 c unless otherwise specified electrical characteristics pnp section t c u d o r p w e n
ds30422 rev. 1 - 2 4 of 6 dcx (xxxx) h www.diodes.com t c u d o r p w e n notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping dcx124eh-7 sot-563 3000/tape & reel dcx144eh-7 sot-563 3000/tape & reel DCX143EH-7 sot-563 3000/tape & reel dcx114yh-7 sot-563 3000/tape & reel dcx123jh-7 sot-563 3000/tape & reel dcx114eh-7 sot-563 3000/tape & reel dcx143th-7 sot-563 3000/tape & reel dcx114th-7 sot-563 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2003 2004 2005 2006 2007 2008 2009 code prs t uvw cxx = product type marking code (see page 1) ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september cxxym marking information date code key
ds30422 rev. 1 - 2 5 of 6 dcx (xxxx) h www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01 2 3 4 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e 75 c -25c 5 67 25c 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 5 10 5 15 25 i=0ma e 10 1000 100 1 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve - total p , power dissipation (mw) d typical curves - DCX143EH npn section
ds30422 rev. 1 - 2 6 of 6 dcx (xxxx) h www.diodes.com t c u d o r p w e n typical curves - DCX143EH pnp section 1 1 10 01020304050 i , collector current (ma) c fi g . 11 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01 2 3 4 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 10 collector current vs. input volta g e 75 c -25c 5 67 25c v = 5v o 0 2 4 6 10 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 9 output capacitance 12 10 5 15 25 8 i=0ma e 10 1000 100 1 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 8 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 7 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c
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